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Welcome to J2N 2026

The 2026 National Nanowire Days (J2N 2026) will be organized by Pascal Institute (IP) in Clermont-Ferrand from Wednesday, September 30 to Friday, October 2, 2026.

J2N brings together the scientific community working on semiconductor nanowires, primarily but not exclusively.

For the 2026 edition, J2N will be expanded to include the Functionalization axis of the GDR MATEPI as well as the Nanomaterials/Nanowires axis of the GDR NAME.

The objective is to provide an overview of national research activities in crystal growth and nanowire structuring, their advanced characterization, and their integration into devices for all possible application fields.

We will adopt the same format as previous J2N meetings, consisting of four half-days of conference sessions:

  • Wednesday, September 30, 2026 – afternoon (starting at 2:00 PM)
  • Thursday, October 1, 2026 – full day
  • Friday, October 2, 2026 – morning (ending around 1:30 PM)

Please mark these dates in your calendars if you wish to participate.

Registration is open via the following link.

Important Dates

Registration opening: June 8, 2026

Registration deadline: July 8, 2026

Registration is now open! Registration J2N2026

The registration fee includes the Thursday conference dinner, Thursday and Friday lunches, coffee breaks, and the book of abstracts (or its electronic version).

Abstract Submission

  • Abstract submission opens: May 15, 2026
  • Abstract submission deadline: July 12, 2026
  • Notification of acceptance: July 20, 2026

Invited Speakers

Geoffrey AVIT (Institut Pascal)

Fast Growth, Fine Control: Advances and Opportunities in HVPE Epitaxy of III–V Semiconductor Nanowires

Daniel Bellet (LMGP)

Science and Applications of Metallic Nanowire Networks: A Brief State of the Art

Benjamin Damilano (CHREA)

Top-Down GaN/InGaN Nanowires for Nanolasers and Quantum Emitters

Ludovic Desplanque (IEMN)

Selective Growth of Planar III–V Semiconductor Nanowires for Quantum Electronics

Noelle Gogneau (C2N)

Growth and Characterization of InGaN/GaN Nanowires for LED Applications, Single-Photon Sources, and Photocatalysis

Moïra Hocevar (Institut Néel)

Combining Materials from Different Semiconductor Families for Quantum Technologies: The Case of ZnTe–InAs Nanowires

Charles Renard (C2N)

Growth of Hexagonal-Phase Group-IV Nanowire Heterostructures on Bulk Hexagonal Substrates

Lionel Santinacci (CINAM)

Atomic Layer Deposition: A Key Technology for Functional 1D Nanostructures in Photoelectrolysis

Sponsors

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